Monolayer Graphene on Si3N4 (10 mm x 10 mm) - Pack 4 units GFET and the probe pads located

and the probe pads located near the periphery of the chip

"Graphene Sensor Arrays for Rapid and Accurate Detection of Pancreatic Cancer Exosomes in Patients’ Blood Plasma Samples"

Highly Flexible

· Resistivity of Si substrate: 1-10 Ω

· Encapsulation: 50 nm Al2O3

Monolayer Graphene on Si3N4 (10 mm x 10 mm) - Pack 4 units GFET and the probe pads locatedMonolayer Graphene film on Si3N4 (10 mm x 10 mm) Processed in ISO 7 Cleanroom Monolayer Graphene produced by CVD on copper catalyst and transferred to a Si3N4 substrate using wet transfer process. This product is ideal for R&D departments and universities. Graphene Film Transparency: > 97 % Coverage: > 95% Polymer assisted transfer Thickness (theoretical): 0. 345 nm Hall Electron Mobility on Si3N4: 1432428 cm2 Vs Sheet Resistance: 576172 Ohms sq (1cm